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Гусак Андрей Михайлович

Фамилия: Г

10. Gusak A.M, Lyashenko Yu.A. Принцип максимальносты производства энтропии при выборе пути эволюции диффузионного-взаимодействующих систем. Ч. I. Общая схема и применение к твердофазным реакциям (029.07) Journal of Functional Materials (in Russian, Moscow), # 5 (2007), 170
11. Gusak A.M, Lyashenko Yu.A. Принцип максимальносты производства энтропии при выборе пути эволюции диффузионного-взаимодействующих систем. Ч. II. Проблема взаимной диффузии (036.07) Journal of Functional Materials (in Russian, Moscow), # 6 (2007), p. 210
12. Gusak A.M, Lyashenko Yu.A. Принцип максимальносты производства энтропии при выборе пути эволюции диффузионного-взаимодействующих систем. Ч. III. Диффузия в двухфазных зонах (044.07) Journal of Functional Materials (in Russian, Moscow), # 7 (2007), 250
13. Fan-Yi Ouyang, K. N. Tu, Yi-Shao Lai, and Andriy M. Gusak, “Effect of entropy production on microstructure change in eutectic SnPb flip chip solder joints by thermomigration.” Appl. Phys. Lett, 89, 221906 (2006).
14. Gusak, A.M., G.V. Lutsenko, and K.N. Tu, Ostwald Ripening with Non-equilibrium Vacancies. Acta Materialia, v.54, # 3 (2006) pp.785-791.
15. Lyashenko Y.O., Gusak A.M. DIGM – Entropy balance and free energy release rate, Defect and Diffusion Forum 249: 81-90 (2006).
16. A. Huang, AM Gusak, KN Tu, and Yi-Shao Lai, Thermomigration in SnPb composite flip chip solder joints, Appl. Phys. Lett, 88, 141911 (2006).
17. CFGoh, ZHGan, SGMhaisalkar, FYCBoey, AMGusak, PSTeo, Modeling of smoothening effect on morphologies of annealed submicron nickel particles used for electrically conductive adhesives, Journal of Applied Physics, v.100, 084302 (2006)
18. Gan ZH, Shao W., Mhaisalkar SG, Chen Z, Li H., Tu KN, Gusak AM Reservoir effect and the role of low current density regions on electromigration lifetimes in copper interconnects, JOURNAL OF MATERIALS RESEARCH 21 (9): 2241-2245 (2006)
19. Gusak A.M., T.V. Zaporozhets, K.N. Tu, and U. Goesele. “Kinetic analysis of the instability of hollow nanoparticles.” Philosophical Magazine 85 (2005): 4445-4464.
20. Zaporozhets T.V., A.M. Gusak, K.N. Tu, and S.G. Mhaisalkar. “Three-dimensional Simulation of Electromigration – Induced Void Migration at Dielectric – Metallic Thin Film Interfaces.” Journal of Applied Physics 98 (2005): 103508.
21. A. S. Shirinyan, A. M. Gusak, M. Wautelet. Phase diagram versus diagram of solubility: What is the difference for nanosystems? Acta Materialia, v.53, 5025-5032 (2005)
22. Gusak, A.M., and G.V. Lutsenko. “Ripening with noise.” Philosophical Magazine 85 (2005): 1323-1331.
23. Wu, A.T., A.M. Gusak, K.N. Tu, and C.R. Kao. “Electromigration-induced grain rotation in anisotropic conducting beta tin.” Applied Physics Letter 86 (2005): 241902.
24. Pasichnyy, M.O., G. Schmitz, A.M. Gusak, and V. Vovk. “Application of the critical concentration gradient to the nucleation of the first product phase in Co / Al thin films.” Physical Review B 72 (2005): 014118.
25. Gusak, A.M., and F. Hodaj. “Nucleation in a Concentration Gradient.” Chapter 10 in “Nucleation Theory and Applications”, ed.J.Schmelzer, Wiley VCH (2005): 375-417.
26. Vairagar, A.V., S.G. Mhaisalkar, M.A. Meyer, E. Zschech, A. Krishnamoorthy, K.N. Tu, and A.M. Gusak. “Direct evidence of electromigration failure mechanism in dual-damascene Cu interconnect tree structures.” Applied Physics Letters 87, (2005): 081909.

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